Microstructure Examination of Copper Wafer Bonding
نویسندگان
چکیده
The microstructure morphologies and oxide distribution of copper bonded wafers were examined by means of transmission electron microscopy (TEM) and energy dispersion spectrometer (EDS). Cu wafers exhibit good bond properties when wafer contact occurs at 400°C/4000 mbar for 30 min, followed by an anneal at 400°C for 30 min in N2 ambient atmosphere. The distribution of different defects showed that the bonded layer became a homogeneous layer under theses bonding conditions. The oxidation distribution in the bonded layer is uniform and sparse. Possible bonding mechanisms are discussed.
منابع مشابه
Wafer-level Cu-Cu bonding technology
0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.04.016 ⇑ Corresponding author. E-mail address: [email protected] (K.-N. C Semiconductor industry currently utilizes copper wafer bonding as one of key technologies for 3D integration. This review paper describes both science and technology of copper wafer bonding with regard to present applications. The classifi...
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